transistor (npn) features ? high transition frequency ? low saturation voltag e m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 40 v v ceo collector - emitter voltage 15 v v ebo emitter - base voltage 5 v i c collector current 200 m a p c collector power dissipation 150 m w r ja thermal resistance from j u nction to a mbient 833 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 100 a , i e =0 40 v collector - emitter breakdown voltage v (br) c e o i c = 1 ma, i b =0 15 v emitter - base breakdown voltage v (br)eb o i e = 100 a , i c =0 5 v collector cut - off current i cbo v cb = 40 v, i e =0 0.1 a emitter cut - off current i ebo v eb = 5 v, i c =0 0.1 a h fe (1) v ce = 1 v, i c = 10 ma 40 240 dc current gain h fe (2) v ce = 1 v, i c = 1 00 ma 20 collector - emitter saturation voltage v ce(sat) i c = 20 ma, i b = 1 ma 0.3 v b ase - emitter saturation voltage v b e(sat) i c = 20 ma, i b = 1 ma 1 v transition frequency f t v ce = 10 v,i c = 10 ma 200 mhz collector output capacitance c ob v cb = 10 v, i e =0, f=1mhz 6 pf classification of h fe ( 1 ) rank r o y range 40 C 80 70 C 140 120 C 240 marking chr cho chy so t C 23 1. base 2. emitter 3. collector 2 sc 3437 1 www.htsemi.com semiconductor jinyu
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